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| 2SK213, 2SK214, 2SK215, 2SK216 Silicon N-Channel MOS FET Application High frequency and low frequency power amplifier, high speed switching. Complementary pair with 2SJ76, J77, J78, J79 Features * * * * Suitable for direct mounting High forward transfer admittance Excellent frequency response Enhancement-mode Outline TO-220AB D G 1 2 3 1. Gate 2. Source (Flange) 3. Drain S 2SK213, 2SK214, 2SK215, 2SK216 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage 2SK213 2SK214 2SK215 2SK216 Gate to source voltage Drain current Body to drain diode reverse drain current Channel dissipation VGSS ID I DR Pch Pch* Channel temperature Storage temperature Note: 1. Value at TC = 25C Tch Tstg 1 Symbol VDSX Ratings 140 160 180 200 15 500 500 1.75 30 150 -45 to +150 Unit V V mA mA W W C C Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage 2SK213 2SK214 2SK215 2SK216 Gate to source breakdown voltag Gate to source voltage Drain to source saturation voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Note: 1. Pulse test V(BR)GSS VGS(on) VDS(sat) |yfs| Ciss Crss Symbol V(BR)DSX Min 140 160 180 200 15 0.2 -- 20 -- -- Typ -- -- -- -- -- -- -- 40 90 2.2 Max -- -- -- -- -- 1.5 2.0 -- -- -- Unit V V V V V V V mS pF pF I G = 10 A, VDS = 0 I D = 10 mA, VDS = 10 V *1 I D = 10 mA, VGD = 0 *1 I D = 10 mA, VDS = 20 V *1 I D = 10 mA, VDS = 10 V, f = 1 MHz Test conditions I D = 1 mA, VGS = -2 V 2 2SK213, 2SK214, 2SK215, 2SK216 Power vs. Temperature Derating 60 Channel Dissipation Pch (W) Drain Current ID (mA) Typical Output Characteristics 500 3.5 TC = 25C 3.0 400 2.5 300 2.0 200 1.5 100 1.0 VGS = 0.5 V 4 8 16 20 12 Drain to Source Voltage VDS (V) 40 20 0 50 100 Case Temperature TC (C) 150 0 Typical Output Characteristics 50 TC = 25C 500 0.8 Drain Current ID (mA) 0.7 0.6 0.5 0.4 10 0.3 0.2 VGS = 0.1V Typical Transfer Characteristics VDS = 20 V Drain Current ID (mA) 30 300 20 200 100 0 60 20 40 80 100 Drain to Source Voltage VDS (V) 0 3 1 2 4 Gate Source Voltage VGS (V) TC =- 40 400 25 C 25 75 5 3 2SK213, 2SK214, 2SK215, 2SK216 Typical Transfer Characteristics 100 80 TC = -25 C 25 75 Forward Transfer Admittance yfs (mS) Forward Transfer Admittance vs. Drain Current 200 100 50 VDS = 20 V Drain Current ID (mA) 60 20 10 5 TC = 25C VDS = 20 V 40 20 0 1.2 0.4 0.8 1.6 Gate Source Voltage VGS (V) 2.0 2 5 20 10 50 100 200 Drain Current ID (mA) Forward Transfer Admittance yfs (mS) Forward Transfer Admittance vs. Frequency 500 100 10 TC = 25C VDS = 20 V ID = 10 mA 1.0 0.1 0.05 5 k 10 k 1M 10 M 100 k Frequency f (HZ) 50 M 4 Unit: mm 11.5 MAX 2.79 0.2 10.16 0.2 9.5 8.0 3.6 -0.08 +0.1 4.44 0.2 1.26 0.15 6.4 +0.2 -0.1 18.5 0.5 15.0 0.3 1.27 2.7 MAX 14.0 0.5 1.5 MAX 7.8 0.5 0.76 0.1 2.54 0.5 2.54 0.5 0.5 0.1 Hitachi Code JEDEC EIAJ Weight (reference value) TO-220AB Conforms Conforms 1.8 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. |
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